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 INTEGRATED CIRCUITS
DATA SHEET
SAA1504T Safety IC
Objective specification File under Integrated Circuits, IC17 2000 Mar 07
Philips Semiconductors
Objective specification
Safety IC
FEATURES * Zero voltage start-up * Discharge and charge overcurrent protection * Automatic release of current protection at removal of charger or load * Low current consumption in normal operating mode * Very low current consumption when battery voltage is lower than 2.3 V * Accurate voltage detection levels * Continuous monitoring of battery voltage and charge or discharge current * External power FETs are driven with an elevated supply voltage, reducing the on-resistance * Able to accommodate 20 V charge voltage * Read out of charge (disable) status * Small package (SO8) * Low external components count * Temperature protection * Charger reverse connection protection. ORDERING INFORMATION TYPE NUMBER SAA1504T PACKAGE NAME SO8 DESCRIPTION plastic small outline package; 8 leads; body width 3.9 mm GENERAL DESCRIPTION
SAA1504T
The SAA1504T is manufactured in a BCD Power Logic 70 process and is intended to be used as a protection circuit for single cell Li-ion battery packs. The current and voltage ratings are especially designed for use in battery packs for portable telephones such as GSM. The circuit continuously monitors the battery voltage, current and junction temperature and will disconnect the battery in case of an overload situation: * Overdischarge protection prevents deep discharge of the cell; deep discharge of a Li-ion cell degrades the life cycle * Overcharge protection for safety reasons * Overcurrent protection on charge or discharge current rate * Temperature protection for preventing charge or discharge at high temperatures * Short circuit protection. It must be stated that this is a safety IC to be integrated inside a battery pack. It is not primarily intended as an end of charge provision.
VERSION SOT96-1
2000 Mar 07
2
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 2000 Mar 07
ST 5 LEVEL SHIFTER K1 x Vptat ESD VCC 8 set disable mode ESD 6.8 V 2.3 V CHARGE PUMP LEVEL SHIFTER LOGIC
BLOCK DIAGRAM
Philips Semiconductors
CEXT 7
handbook, full pagewidth
Safety IC
ESD
SAA1504T
reset disable mode
K2 x Vptat Vref VCC Vcp
3
n.c. 6 VSS 1 VM 4
3.95 V
4.18 V
2 ESD
DO
Vref
CURRENT PROTECTION
3
CO
ESD
175 mV
-185 mV
ESD
Objective specification
SAA1504T
MGS969
Fig.1 Block diagram.
Philips Semiconductors
Objective specification
Safety IC
PINNING SYMBOL PIN VSS DO CO VM ST n.c. CEXT VCC 1 2 3 4 5 6 7 8 DESCRIPTION ground supply output to gate of discharge power FET output to gate of charge power FET negative sense input status output not connected connection for external delay capacitor positive battery sense input FUNCTIONAL DESCRIPTION
SAA1504T
The basic function of the SAA1504T is to protect a single Li-ion cell against overcharge and overdischarge for reasons of life time and safety. The voltage across the cell terminals (Vbat) is monitored continuously and compared to an accurate internal reference voltage. The circuit diagram (see Fig.3) of a Li-ion battery pack shows the SAA1504T and 2 power NMOS transistors which are connected in anti series. Both transistors must have their backgate connected to their source, resulting in 2 backgate diodes in anti series. The timing diagram (see Fig.6) shows the detection levels for the various modes of operation. Battery voltage between 2.6 and 4.18 V
handbook, halfpage
VSS 1 DO 2
8 VCC 7 CEXT n.c. ST
SAA1504T
CO VM 3 4
MGS970
6 5
The safety IC is in the normal operating mode for Vbat = 2.6 to 4.18 V, a charge or discharge current below the current-protection level and a junction temperature below the temperature protection activation level. In this mode transistors SW1 and SW2 are driven with an elevated supply voltage (with a charge pump) which guarantees a low on-resistance in the main current path. This is important for fully utilizing the high energy density of the Li-ion battery technology.
Fig.2 Pin configuration.
handbook, full pagewidth
+ charger/load Vbat
R1 1 k C1 0.47 F CEXT 7 C2 VSS DO SW2 1 2 5 ST VCC 8
SAA1504T
SW1
CO
3
4 VM
MGS971
- charger/load
Fig.3 Safety IC connection diagram.
2000 Mar 07
4
Philips Semiconductors
Objective specification
Safety IC
Battery voltage below 2.3 V When Vbat < 2.3 V the safety IC is in the Power-down mode: SW2 is open to block a further discharge. The battery voltage will increase stepwise, because of the sudden disconnection of the load. The safety IC will not re-enter the normal operating mode at this event unless the battery voltage exceeds the power-down release level of 2.6 V and a charge current is present. So when no charger is present in the Power-down mode, the safety IC stays in this mode, independent of the battery voltage. Connecting a charger in the Power-down mode is detected by a negative voltage on pin VM. Because the voltage at pin VM is defined by a charge current via the backgate diode of SW2, a charge current of a few nAs is already detected. When a charge current is detected and Vbat > 2.6 V, the system will go from the Power-down mode to the normal operating mode. In the Power-down mode the supply current is reduced to 150 nA (typical value) for minimizing the discharge of the battery by the safety IC. This is achieved by disabling all analog circuitry, except the circuitry for detecting the presence of a charger and for detecting Vbat > 2.6 V. Because the charge pump is disabled and battery charging should be possible, SW1 is switched on with a reduced Vgs voltage. Battery voltage above 4.18 V When the battery is charged to Vbat > 4.18 V, the safety IC will enter the charge inhibit mode: SW1 is open and charging is disabled. Connecting a load in the charge inhibit mode is detected by the reversal of the voltage across SW1 and will immediately close SW1, so entering the discharge enable mode. A short time is needed to charge the gate of SW1. During this time the backgate diode between drain and source of SW1 conducts. The safety IC will remain in the discharge enable mode unless: * Vbat < 3.95 V, which results in re-entering the normal operating mode. This transition is not externally noticeable, because both switches remain closed. * A charger is connected, which will immediately open SW1. As an additional safety precaution Vbat > 4.18 V also yields the same reaction, because otherwise a small current of a charger may be undetected, leading to overcharging the Li-ion cell. Zero voltage start-up
SAA1504T
The safety IC has to be able to charge the battery at 0 V. This means that when connecting a charger in case of a completely empty battery, SW1 has to be open. In the Power-down mode output CO is connected via a diode to VCC, so that the charge transistor will be active when VVM is negative. Maximum charge or discharge current and temperature protection When the maximum charge or discharge current is exceeded or when the maximum temperature is detected the disable mode is activated and will open both switches. Exceeding the maximum charge or discharge current is detected by a voltage drop or rise on pin VM when both switches are closed. A release of this mode can only be achieved by removing the load (or charger) and at a junction temperature below 60 C. The disable mode is followed by a return to its previous mode. Normal operating mode In case of correct temperature, battery voltage and charge or discharge current, the system will be in the normal operating mode (see Fig.4). Both the charge and discharge outputs will be HIGH (CO = 1 and DO = 1), so both switches are closed. Power-down mode When Vbat < 2.3 V the safety IC will enter the Power-down mode (see Fig.4). The power-down detection level of 2.3 V has a delay of 5 ms (typical value). The Power-down mode will also be entered without delay when Vbat < 1.9 V. In this mode only charging of the battery is allowed (CO = 1 and DO = 0). The safety IC will return to the normal operating mode as soon as Vbat > 2.6 V and a charge current is detected at the same time.
2000 Mar 07
5
Philips Semiconductors
Objective specification
Safety IC
Charge inhibit mode When Vbat > 4.18 V, the charge inhibit mode will be entered (see Fig.4). At this mode the battery can only be discharged (CO = 0 and DO = 1). The excess charge delay can be set by means of an external capacitor. The delay is then defined as: ted(det) = 30 x CCEXT with ted(det) in ms and CCEXT in nF. When Vbat < 3.95 V, the safety IC will return from the charge inhibit mode to the normal operating mode. The charge inhibit mode will also be entered as soon as a charge current is detected in the discharge enable mode Discharge enable mode When the safety IC is in the charge inhibit mode, charging of the battery is disabled because SW1 is open. Initially discharge of the battery will then occur via the backgate diode of SW1. The load voltage will be approximately 0.6 V lower and dissipation of the backgate diode of SW1 will occur. It is preferable to close both switches at that time without allowing charging of the battery until Vbat < 3.95 V. If a discharge current is detected in the charge inhibit mode, the system will activate the discharge enable mode, closing both switches.
SAA1504T
From the discharge enable mode the charge inhibit mode will be entered again as soon as a charge current is detected or Vbat > 4.18 V. The detection of a higher voltage than 4.18 V is necessary. If the battery is charged with a very low charge current, the safety IC will not switch from the discharge enable mode to the charge inhibit mode. Eventually, the safety IC will enter the charge inhibit mode if the battery is overcharged to Vbat > 4.18 V because of a small charge current. When Vbat < 3.95 V the safety IC will return from the discharge enable to the normal operating mode. If the safety IC is in the charge inhibit mode, it will usually go to the normal operating mode via the discharge enable mode. But if the system is in the charge inhibit mode and the battery pack is stored for several years, the battery voltage can drop because of the battery discharge by the safety IC and the self discharge of the battery. So a voltage drop of the battery is possible, without detecting a discharge current. Because of this, the normal operating mode should also be entered from the charge inhibit mode when Vbat < 3.95 V and not only from the discharge enable mode. In this way, charging a battery is always possible if Vbat < 3.95 V.
handbook, full pagewidth
T > 100 C or I > Imax disable mode(1) CO, DO -185 mV < VVM < 175 mV and T < 60 C to previous mode normal operating CO, DO discharge enable CO, DO
VVM > 480 mV Vbat > 4.18 V or VVM < -10 mV
charge inhibit CO, DO
Vbat < 3.95 V
Vbat < 3.95 V
Vbat > 4.18 V
Vbat > 2.6 V and VVM < -185 mV power down CO, DO from all modes Vbat < 1.9 V or Vbat < 2.3 V at 5 ms
MGS973
(1) Minimum time in the disable mode is about 5 ms.
Fig.4 Flow diagram.
2000 Mar 07
6
Philips Semiconductors
Objective specification
Safety IC
Disable mode When the charge or discharge current exceeds the specified maximum value, the disable mode is entered. Detection of the maximum charge or discharge current is only activated when the outputs are HIGH (CO = 1 and DO = 1) as explained next. If the safety IC is in the Power-down mode and a charge current is detected (e.g. VVM = -0.6 V) the normal operating mode will be entered when Vbat > 2.6 V. Because of a minimum time in which the gate capacitors have to be charged, VVM = -0.6 V for a small period, when the safety IC is already in the normal operating mode. VVM = -0.6 V could also occur when the battery is charged with a current exceeding the maximum charge current. To prevent that a maximum charge current is detected when coming from the Power-down mode a delay is included to ensure charging of both outputs CO and DO. So entering of the disable mode is enabled when both outputs CO and DO are fully charged or after a certain delay. The delay is necessary to activate the current protection even in case the outputs CO or DO can not be fully charged. The same applies for entering the disable mode when the safety IC is in the discharge enable mode.
SAA1504T
The delay of the current protection as a function of the sense voltage VVM (for charge and discharge) is given in Fig.5. The disable mode is also entered when the junction temperature exceeds 100 C. When the temperature drops below 60 C and at the absence of a charger or load, the safety IC will return to its previous mode. Status output The status of the safety IC is available on pin ST. Table 1 Functional table of the status output MODE Normal operating Charge inhibit Discharge enable Power-down Disable Note 1. Only when a charger is connected. OUTPUT PIN ST LOW HIGH LOW LOW HIGH (note 1)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages measured with respect to pin VSS. SYMBOL VCC VCC(clamp) ICC(clamp) Vrev VVM VST Tamb Tstg PARAMETER positive battery sense input voltage clamping voltage clamping current reverse charger voltage negative sense input voltage voltage on pin ST ambient temperature storage temperature Vrev = -(VCC - VVM); VVM positive with respect to VCC CONDITION DC constant ICC(clamp) = 7 mA; t < 60 ms - - - MIN. -0.3 MAX. +4.5 8.5 7 20 UNIT V V mA V
VCC - 20 VCC + 20 V VVM -25 -55 VCC +80 +150 V C C
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 160 UNIT K/W
QUALITY SPECIFICATION In accordance with "SNW-FQ-611-D" and JEDEC class III.
2000 Mar 07
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Philips Semiconductors
Objective specification
Safety IC
CHARACTERISTICS Tamb = 25 C; voltages measured with respect to pin VSS; unless otherwise specified. SYMBOL Supply behaviour VCC ICC Iq positive battery sense input voltage supply current quiescent supply current VCC = 4.0 V; VVM = 0 V Power-down mode VCC = 2.0 V VCC = 1.5 V VCC - VVM minimum charge voltage Detection levels of Vbat; note 1 Vec(det) tec(det) Vec(rel) Vpd(rel) Vpd(det) tpd(det) Vpd(min) Vdch(det) Vch(det) Vch(pres) Vl(pres) IVM VOH excess charge detection voltage excess charge detection voltage delay excess charge release voltage power-down release voltage power-down detection voltage power-down detection voltage delay power-down minimum voltage Tj = 25 C Tj = -10 to +60 C CCEXT = 33 nF 10% 75 35 0 7.0 - 9.0 PARAMETER CONDITIONS MIN.
SAA1504T
TYP.
MAX.
UNIT
4.5 11 300 150 3.0
V A nA nA V
150 75 2.4
at zero charge current; VCC = 0 V 1.8
4.155 4.18 4.150 4.18 0.4 3.87 2.35 2.25 1 1.6 1 3.95 2.6 2.3 5 1.9
4.205 V 4.210 V 2 4.03 2.85 2.35 17 2.2 s V V V ms V
Detection levels on pin VM discharge detection voltage charge detection voltage charger present voltage load present voltage current at pin VM charge inhibit mode discharge enable mode Power-down or disable mode disable mode VCC - VVM = 15 V; VCC = 4.33 V VCC = 2.4 V; RL = VCC = 4.0 V; RL = Temperature protection Tprot(start) Tprot(rel) Vprot(min) td start of temperature protection release of temperature protection disable mode 90 50 100 60 110 70 C C mV s ms 450 -5 -120 145 1 480 -10 -185 175 2 510 -20 -250 205 3 mV mV mV mV A V V
Outputs on pins CO and DO HIGH-level output voltage 4.4 6.4 4.6 7 4.8 7.6
Current protection; see Fig.5; note 2 minimum current-protection voltage delay DC level on pin VM minimum value at VVM = 510 mV 150 100 2 250 200 4 350 400 8
2000 Mar 07
8
Philips Semiconductors
Objective specification
Safety IC
SAA1504T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Status output on pin ST IO output current pin ST = HIGH; see Table 1; VST = VVM + 0.5 V VCC - VVM = 20 V VCC - VVM = 4 V Notes 1. The voltages are measured at the terminals of the battery. This voltage equals the voltage across series resistor R1 = 1 k plus the voltage on pin VCC (see Fig.3). 2. For both charge and discharge state. 13 9 17 12 21 15 A A
MGS972
handbook, halfpage
10
td (s)
1 charge 10-1 discharge
10-2
10-3
10-4 -1
-0.5
0
0.5 VVM (V)
1
Fig.5 Current-protection delay.
2000 Mar 07
9
Philips Semiconductors
Objective specification
Safety IC
TIMING DIAGRAM This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
SAA1504T
normal operating load present
discharge enable no charger; no load
disable mode load present I dch > I max load present no charger; no load discharge enable charge inhibit td
tec(det)
charger present
normal operating no charger; no load
disable mode
charger present I ch > I max td
MGS974
normal operating
charger present
handbook, full pagewidth
power-down
no charger; no load
normal operating
discharge enable charge inhibit discharge enable
ted(det)
load present
no charger; no load charger present no charger; no load load present no charger; no load
charge inhibit
normal operating
tec(det)
charger present
power-down
SW1 on
SW2 on
+Vdiode
2000 Mar 07
10
-Vdiode
Vbat
VM
Vbat
Vbat - Vcharger
4.18 3.95
2.6 2.3
off
off
0
Fig.6 Timing diagram.
Philips Semiconductors
Objective specification
Safety IC
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
SAA1504T
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024
0.028 0.004 0.012
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03 JEDEC MS-012 EIAJ EUROPEAN PROJECTION
ISSUE DATE 97-05-22 99-12-27
2000 Mar 07
11
Philips Semiconductors
Objective specification
Safety IC
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. Manual soldering
SAA1504T
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
2000 Mar 07
12
Philips Semiconductors
Objective specification
Safety IC
Suitability of surface mount IC packages for wave and reflow soldering methods
SAA1504T
SOLDERING METHOD PACKAGE WAVE BGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. not suitable not not not suitable(2) recommended(3)(4) recommended(5) suitable REFLOW(1) suitable suitable suitable suitable suitable
2000 Mar 07
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Philips Semiconductors
Objective specification
Safety IC
NOTES
SAA1504T
2000 Mar 07
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Philips Semiconductors
Objective specification
Safety IC
NOTES
SAA1504T
2000 Mar 07
15
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403506/25/01/pp16
Date of release: 2000
Mar 07
Document order number:
9397 750 06537


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